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| parameter typ. max. units r ja maximum junction-to-ambient 75 100 hexfet power mosfet thermal resistance v dss = -12v r ds(on) = 0.05 parameter max. units v ds drain- source voltage -12 v i d @ t a = 25c continuous drain current, v gs @ -4.5v -4.3 i d @ t a = 70c continuous drain current, v gs @ -4.5v -3.4 a i dm pulsed drain current -34 p d @t a = 25c power dissipation 1.3 p d @t a = 70c power dissipation 0.8 linear derating factor 0.01 w/c e as single pulse avalanche energy 33 mj v gs gate-to-source voltage 8.0 v t j, t stg junction and storage temperature range -55 to + 150 c these p-channel mosfets from international rectifier utilize advancedprocessing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet ? power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in battery andload management. a thermally enhanced large pad leadframe has been incorporated into the standard sot-23 package to produce a hexfet power mosfet with the industry's smallest footprint. this package, dubbed the micro3 ? , is ideal for applications where printed circuit board space is at a premium. the low profile(<1.1mm) of the micro3 allows it to fit easily into extremely thin application environments such as portable electronics and pcmcia cards. the thermal resistance and power dissipation are the best available . micro3 ? s g 1 2 d 3 ultra low on-resistance p-channel mosfet sot-23 footprint low profile (<1.1mm) available in tape and reel fast switching 1.8v gate rated lead-free rohs compliant, halogen-free ! " #$ %& form quantity IRLML6401TRPBF micro3 ? (sot-23) tape and reel 3000 IRLML6401TRPBF package type standard pack orderable part number base part number downloaded from: http:/// ! " #$ %& parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) CCC CCC p-n junction diode. v sd diode forward voltage CCC CCC -1.2 v t j = 25c, i s = -1.3a, v gs = 0v t rr reverse recovery time CCC 22 33 ns t j = 25c, i f = -1.3a q rr reverse recoverycharge CCC 8.0 12 nc di/dt = -100a/ s repetitive rating; pulse width limited by max. junction temperature. pulse width 300 s; duty cycle 2%. source-drain ratings and characteristics -1.3 -34 # s d g !' ( )* + $$ !& !* starting t j = 25c, l = 3.5mh r g = 25 , i as = -4.3a. parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -12 CCC CCC v v gs = 0v, i d = -250 a ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC -0.007 CCC v/c reference to 25c, i d = -1ma CCC CCC 0.050 v gs = -4.5v, i d = -4.3a r ds(on) static drain-to-source on-resistance ,,, CCC 0.085 v gs = -2.5v, i d = -2.5a ,,, CCC 0.125 v gs = -1.8v, i d = -2.0a v gs(th) gate threshold voltage -0.40 -0.55 -0.95 v v ds = v gs , i d = -250 a g fs forward transconductance 8.6 CCC CCC s v ds = -10v, i d = -4.3a CCC CCC -1.0 v ds = -12v, v gs = 0v CCC CCC -25 v ds = -9.6v, v gs = 0v, t j = 55c gate-to-source forward leakage CCC CCC -100 v gs = -8.0v gate-to-source reverse leakage CCC CCC 100 v gs = 8.0v q g total gate charge CCC 10 15 i d = -4.3a q gs gate-to-source charge CCC 1.4 2.1 nc v ds = -10v q gd gate-to-drain ("miller") charge CCC 2.6 3.9 v gs = -5.0v t d(on) turn-on delay time CCC 11 CCC v dd = -6.0v t r rise time CCC 32 CCC i d = -1.0a t d(off) turn-off delay time CCC 250 CCC r d = 6.0 t f fall time CCC 210 CCC r g = 89 c iss input capacitance CCC 830 CCC v gs = 0v c oss output capacitance CCC 180 CCC pf v ds = -10v c rss reverse transfer capacitance CCC 125 CCC ? = 1.0mhz electrical characteristics @ t j = 25c (unless otherwise specified) a i dss drain-to-source leakage current na ns downloaded from: http:/// - ! " #$ %& fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) -1.0v 20 s pulse width tj = 150c vgs top -7.0v -5.0v -4.5v -3.0v -2.5v -1.8v -1.5v bottom -1.0v 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -v gs , gate-to-source voltage (v) 0.1 1.0 10.0 100.0 - i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 150c v ds = -12v 20 s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -4.5v -4.3a 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) -1.0v 20 s pulse width tj = 25c vgs top -7.0v -5.0v -4.5v -3.0v -2.5v - 1.8v -1.5v bottom -1.0v downloaded from: http:/// ! " #$ %& fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0.1 1 10 100 1000 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c -v , drain-to-source voltage (v) -i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 1 10 100 v ds , drain-to-source voltage (v) 0 200 400 600 800 1000 1200 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0.1 1 10 100 0.2 0.6 1.0 1.4 1.8 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 0 4 8 12 16 0 2 4 6 8 10 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs i = d -4.3a v = -10v ds downloaded from: http:/// . ! " #$ %& fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature fig 10. maximum avalanche energy vs. drain current 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 5.0 t , case temperature ( c) -i , drain current (a) c d 0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0 20 40 60 80 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom -1.9a -3.4a -4.3a downloaded from: http:/// / ! " #$ %& fig 13. typical on-resistance vs. drain current fig 12. typical on-resistance vs. gate voltage 0 1 02 03 04 0 -i d , drain current ( a ) 0.00 0.05 0.10 0.15 0.20 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ) vgs = -4.5v vgs = -2.5v vgs = -1.8v fig 14. typical threshold voltage vs. junction temperature -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.3 0.4 0.5 0.6 0.7 0.8 - v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = -250 a 1.0 2.0 3.0 4.0 5.0 6.0 7.0 -v gs, gate -to -source voltage ( v ) 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 r d s ( o n ) , d r a i n - t o - s o u r c e v o l t a g e ( ) id = -4.3a downloaded from: http:/// 0 ! " #$ %& micro3 (sot-23 / to-236ab) part marking information 0.08 0.88 0.01 0.89 0.95 b s c mi l l ime t e r s min e e e1 d la a1a2 c m o b sy mi n max max .036 .0375 b s c dime ns ions inches b0.30 bbb 0.15 .008 ccc .006 0.25 bs c l1 l 0.40 0.60 .0118 b s c aaa 0.20 .004 0 8 8 0 2.80 1.20 0 e1 e d 5 6 3 12 ccc c b a b 5 6 e e1 a2 a a1 bbb c a b 3x b aaa c 3 s urf 0 3x l l1 h 4 7 2.10 e1 1.90 b s c .075 b s c .0119 .0032 .111 .083 .048 .055 .119 .103 .0196 .0078 .0039 .044 .0004 .035 .040 .0236 .0158 1.02 0.20 0.50 2.64 3.04 1.40 1.12 0.10 0.10 1.90 [.075] 0.95 [.0375] 0.972 [.038] 2.742 [.1079] 0.802 [.031] r e comme nde d f oot p r int 3x 3x not e s 1. dimens ioning and tolerancing per as me y14.5m-1994. 4 datum plane h is located at the mold parting line. 5 datum a and b to be determined at datum plane h. 6 di me n s i ons d an d e 1 ar e me as u r e d at dat u m pl ane h . 2. dimensions are shown in millimeters and inches. 3. controlling dimension: millimet er. 7 dimension l is t he lead length for soldering t o a subst rat e. 8. outline conforms to jedec outline to-236ab. f = irlml6401 a 2001 a 27 notes: this part marking information applies to devices produced after 02/26/2001 assembly lot code lead-free date code e = irlml6402 x = part number code reference : d = irlml5103 c = irlml6302 b = irlml2803 a = irlml2402 w = (1-26) if preceded by last digit of calendar year w = (27-52) if preceded by a letter y 8 2008 3 2003 1 2001 year 2002 2 5 2005 2004 4 2007 2006 7 6 2010 0 2009 9 year y c 03 work week 0102 a w b 04 d 24 26 25 xz y work week w h = irlml5203 g = irlml2502 k h g f e d c b 2006 2003 2002 2005 2004 2008 2007 2010 2009 j y 51 29 2830 c bd 50 x i = irlml0030 j = irlml2030 l = irlml0060 m = irlml0040 k = irlml0100 n = irlml2060 p = irlml9301 r = irlml9303 cu wire halogen free part number 52 z date code example: yww = 432 = df yww = 503 = 5c 2018 2013 2011 2012 2015 2014 2017 2016 2020 2019 2018 2013 2011 2012 2015 2014 2017 2016 2020 2019 w = irfml8244 v = irlml6346 u = irlml6344 t = irlml6246 s = irlml6244 y = irlml2246 x = irlml2244 z = irfml9244 downloaded from: http:/// % ! " #$ %& ? 2.05 ( .080 ) 1.95 ( .077 ) tr feed direction 4.1 ( .161 ) 3.9 ( .154 ) 1.6 ( .062 ) 1.5 ( .060 ) 1.85 ( .072 ) 1.65 ( .065 ) 3.55 ( .139 ) 3.45 ( .136 ) 1.1 ( .043 ) 0.9 ( .036 ) 4.1 ( .161 ) 3.9 ( .154 ) 0.35 ( .013 ) 0.25 ( .010 ) 8.3 ( .326 ) 7.9 ( .312 ) 1.32 ( .051 ) 1.12 ( .045 ) 9.90 ( .390 ) 8.40 ( .331 ) 178.00 ( 7.008 ) max. notes: 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. downloaded from: http:/// 1 ! " #$ %& ms l 1 (per je de c j-s t d-020d ?? ) rohs c ompliant yes qualification information ? qualification level cons umer (per jedec jesd47f ?? guidelines) moisture sensitivity level micro3 ? (sot-23) ? qualification standards can be found at international rectifiers web site: http://www.irf.com/product-info/reliability ?? applicable version of jedec standard at the time of product release ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ revision history date comment ? updated data sheet with new ir corporate template. ? updated package outline & part marking on page 7. ? added qualification table -qual level "consumer" on page 9. ? added bullet point in the benefits "rohs compliant, halogen -free" on page 1. 4/28/2014 downloaded from: http:/// |
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